Process for producing a buried strip semiconductor laser with or

Details Process for producing a buried strip semiconductor laser with or Process for producing a buried strip semiconductor laser with or

1986-09-23

1988-04-12

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 156662, 437129, 437228, 357 17, 372 50, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

047372370

ABSTRACT:
For burying the active strip, two narrow bands are etched on either side of the strip and localized epitaxy repeat takes place on said two bands, which makes it possible to work at lower temperatures. Moreover, the substrate and confinement layer are of type p and the epitaxy repeat layer of highly doped type n.sup.+. The guide layer can be etched to constitute a defractive network.

REFERENCES:
patent: 4213805 (1980-07-01), Tsukada
patent: 4468850 (1984-09-01), Liau et al.
Electronics Letters, vol. 20, No. 21, 11 Oct. 1984, pp. 850-851, Staines, Middlesex, GB; R. Blondeau et al.: "CW Operation of GalnAsP Buried Ridge Structure Laser at 1.5 mum Grown by LP-MOCVD" * Sections: Introduction et Device Fabrication; FIG. 1 *.
Electronics Letters, vol. 20, No. 21, 11 Oct. 1984, pp. 856-857, Staines, Middlesex, GB; T. L. Koch et al.: "Low-Threshold High-Speed 1-55 Mum Vapour Phase Transported Buried Heterostructure Lasers (VPTBH)" * p. 856; FIG. 1 *.
Applied Physics Letters, vol. 45, No. 12, Dec. 1984, pp. 1272-1274, Woodbury, New York, U.S.; W. T. Tsang et al.: "Heteroepitaxial Ridge-Overgrown Distributed Feedback Laser at 1.5 mum" *p. 1272; FIG. 1 *.
Electronics Letters, vol. 20, No. 14, 5 Jul. 1984, pp. 595-596, Staines, Middlesex, GB; M. Kitamura et al.: "Low-Threshold and High-Temperature Single-Longitudinal-Mode Operation of 1.55 Mum-Band DFB-DC-PHB LDs" * p. 595; FIG. 1 *.
Applied Physics Letters, vol. 38, No. 5, Mar. 1981, pp. 301-303, New York, U.S.; P. C. Chen et al.: "Embedded Epitaxial Growth of Low-Threshold GalnAsp/lnP Injection Lasers" p. 301; FIG. 1 *.

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