Process for producing a base connection of a bipolar transistor

Details Process for producing a base connection of a bipolar transistor Process for producing a base connection of a bipolar transistor

2005-03-31

2009-06-02

Wilczewski, M. (Department: 2813)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S345000, C438S347000, C438S349000, C438S353000, C257S197000, C257S572000, C257S576000, C257SE29044

Reexamination Certificate

active

07541249

ABSTRACT:
A process for producing a base connection of a bipolar transistor is provided. The process includes the steps of providing a semiconductor structure that can include a three-dimensional sacrificial structure that is selectively removable with respect to adjacent regions. A first semiconductor layer and a second layer of dielectric material is deposited. The first semiconductor layer is partially exposed by partial removal of the second layer. A first reaction layer is deposited that, together with the first semiconductor layer forms reaction products, which are selectively removable with respect to adjacent regions. Remaining material of the first reaction layer that has not reacted with the material of the first semiconductor layer is removed. A second reaction layer is deposited that, with the first semiconductor layer, forms a low-resistivity compound. Remaining material of the second reaction layer that has not reacted with the material of the first semiconductor layer is removed. An additional dielectric layer is deposited and the sacrificial structure is exposed by partial removal of the additional dielectric layer. Dielectric inner spacers are provided in an aperture formed by removal of the sacrificial structure.

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