Process for preparing thin film and p-type diamond semiconductor

Details Process for preparing thin film and p-type diamond semiconductor Process for preparing thin film and p-type diamond semiconductor

1985-04-17

1988-04-26

Richman, Barry S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156614, 156DIG68, 156DIG102, 427 42, C30B 2506

Patent

active

047402636

ABSTRACT:
A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nuclei are caused to form and grow to a thin film on a heated plate substrate under electron bombardments in an atmosphere of a mixed gas of hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD.

REFERENCES:
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Seiichiro Matsumoto et al., "Growth of Diamond Particles from Methane-Hydrogen Gas", Journal of Material Science, vol. 17, 1982, pp. 3106-3112.
B. V. Spitsyn et al., "Vapor Growth of Diamond on Diamond and Other Surfaces", Journal of Crystal Growth, vol. 52, 1981, pp. 219-226.
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C. Weissmantel et al., "Structure and Properties of Quasi-Amorphous Films Prepared by Ion Beam Techniques", Thin Solid Films, vol. 72, 1980, pp. 19-31.
Toshio Mori et al., "Crystal Structure of Diamondlike Carbon Films Prepared by Ionized Deposition from Methane Gas", Journal of Applied Physics, vol. 55, No. 9, May 1, 1984, pp. 3276-3279.

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