Process for preparing single crystal of potassium titanium arsen

Details Process for preparing single crystal of potassium titanium arsen Process for preparing single crystal of potassium titanium arsen

1990-06-21

1991-04-09

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156623R, 156624, 156DIG71, 156DIG75, C30B 904

Patent

active

050061992

ABSTRACT:
Disclosed is a process for preparing a single crystal of potassium titanium arsenate by flux growth method, wherein a compound of K.sub.2 ZO.sub.4, in which Z is at least one of W, S, Mo and Cr, is used as a flux and the flux is blended with potassium titanium arsenate in such a way that the proportion of potassium titanium arsenate is from 15 to 50 mol % of the whole. The process may be carried out by conventional flux growth method under an atmospheric pressure and gives a single crystal of potassium titanium arsenate at a low cost.

REFERENCES:
patent: 3341302 (1967-09-01), Flanigen et al.
patent: 3949323 (1976-04-01), Bierlein et al.
patent: 4231838 (1980-11-01), Gier
patent: 4305778 (1981-12-01), Gier
patent: 4746396 (1988-05-01), Marnier
patent: 4761202 (1988-08-01), Bordui et al.

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