Process for preparing single crystal binary metal oxides of impr

Details Process for preparing single crystal binary metal oxides of impr Process for preparing single crystal binary metal oxides of impr

1986-06-02

1988-02-09

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG71, 156DIG75, 156DIG78, 156DIG87, 156DIG89, 1566171, 423593, 423598, B01J 1718

Patent

active

047240385

ABSTRACT:
A method is disclosed for the growth of single crystals of a binary metal oxides of the formula ABO.sub.3 where A is an alkali or alkaline earth metal, B is at least one element selected from titanium, niobium and tantalum. A mixture comprising the constituent components of the ABO.sub.3 crystal is prepared using a basic oxide or carbonate of A and a stoichiometric excess of an acidic oxide of B. The mixture is heated at an elevated temperature to form a melt and is thereafter exposed to a reactive atmosphere of a mixture of gaseous carbon monoxide and carbon dioxide. Crystal growth from the melt is effected by a top-seeded crystal pulling technique.

REFERENCES:
patent: 2696651 (1954-12-01), Gravley
patent: 4144117 (1979-03-01), Fukuda et al.
patent: 4439265 (1984-03-01), Alferness et al.
patent: 4609694 (1986-09-01), Morimoto et al.
Belrus et al., Mat. Res. Bull., vol. 6, pp. 899-906 (1971).

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