Process for preparing semiconductor substrate by bonding to a me

Details Process for preparing semiconductor substrate by bonding to a me Process for preparing semiconductor substrate by bonding to a me

1995-01-23

1996-07-16

Chaudhari, Chandra

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 71, 437974, H01L 21306

Patent

active

055363610

ABSTRACT:
A process for preparing a semiconductor substrate comprises a step of making a silicon substrate porous, a step of forming a non-porous silicon monocrystalline layer on the resulting porous substrate, a step of bonding the surface of the non-porous silicon monocrystalline layer to another substrate having a metallic surface, and a step of removing the porous silicon layer of the bonded substrates by selective etching.

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Taka et al., "Porous silicon layers and its oxide for the silicon-on-insulator structure", J. Appl. Phys., 60(1), 1 Jul. 1986.
Cullen, "Single Crystal Silicon on Non-Single Crystal Insulators", Journ. Cryst. Growth, vol. 63, No. 3, Oct., 1983, pp. 429-590.

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