Process for preparing semiconductor device

Details Process for preparing semiconductor device Process for preparing semiconductor device

1983-01-03

1984-06-12

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 90, 427 93, 427 94, 427 95, 427 39, H01L 21283

Patent

active

044541660

ABSTRACT:
A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.

REFERENCES:
patent: 4283439 (1981-08-01), Higashinakagawa
patent: 4321284 (1982-03-01), Yakushiji
patent: 4330569 (1982-05-01), Gulett
Kern et al., "Advances in Deposition Processes for Passivating Films", J. Vac. Sci. Technol., vol. 14, No. 5, Sep./Oct. 1977, pp. 1082-1099.

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