Process for preparing haze free semiconductor surfaces and surfa

Details Process for preparing haze free semiconductor surfaces and surfa Process for preparing haze free semiconductor surfaces and surfa

1976-08-17

1977-12-27

Smith, Gary L.

Abrasive tool making process, material, or composition

Impregnating or coating an abrasive tool

51281SF, 51317, 51308, B24B 100

Patent

active

040646602

ABSTRACT:
Process for producing haze free semiconductor surfaces, especially surfaces of (111)-oriented gallium arsenide, by polishing, which comprises subjecting the surfaces to the polishing action of a mixture of (a) an aqueous suspension containing one or several polishing agents selected from quartz, silica, a silicate and a fluosilicate, and having a pH within the range of from 6 to 8 and, (b) an aqueous solution of hydrogen peroxide having a pH likewise ranging from 6 to 8, the latter being present in an amount of 2 to 15% by weight of H.sub.2 O.sub.2. The invention also relates to the haze free semiconductor surfaces so made.

REFERENCES:
patent: 2997827 (1961-08-01), Giffen
patent: 3429080 (1969-02-01), Lachapelle
patent: 3877183 (1975-04-01), Deckert
V. L. Rideout, "Polishing Technique For GaAs", I.B.M. Technical Disclosure ulletin, vol. 15, No. 3, Aug. 1972.

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