Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1985-09-30
1987-05-05
Doll, John
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156616R, 156DIG72, C30B 906
Patent
active
046629807
ABSTRACT:
Process for preparing crystals of Hg.sub.1-x Cd.sub.x Te, in which ingots of HgTe and of CdTe are made to pass through a solvent zone, characterized in that it comprises the step of using as solvent a mixture of tellurium, of HgTe and of CdTe in proportions corresponding to thermodynamic balance.
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Goodman; "Crystal Growth Theory & Techniques"; vol. 1, pp. 197-201; 1974.
Fiorito et al.; "A Possible Method for the Growth of Homogeneous Mercury Cadmium Telluride Single Crystals"; J. Electrochem. Soc. (USA); vol. 125; No. 2; pp. 315-317; Feb. 1978.
R. Triboulet, "CdTe and CdTe:Hg Alloys Crystal Growth Using Stoichiometric and Offstoichiometric Zone Passing Techniques" Revue de Physique Appliques, vol. 12, Feb. 1977, pp. 123-128.
Didier Gerard
Durand Alain
Royer Michel
Triboulet Robert
Doll John
Kunemund Robert
Societe Anonyme de Telecommunications
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