Process for preparing a single oxide crystal

Details Process for preparing a single oxide crystal Process for preparing a single oxide crystal

1984-03-01

1986-04-15

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG63, C30B 913

Patent

active

045825629

ABSTRACT:
A process for preparing a single oxide crystal comprising the steps of mixing to fuse raw materials for crystal growth and a flux, cooling the fused mixture slowly to grow and precipitate a single crystal, and dipping up said single crystal from the molten flux while said flux is molten. A substitution amount of the substituted element in the grown crystal can be controlled. The crystal thus obtained is of high quality with little cracks.

REFERENCES:
patent: 3677718 (1972-07-01), Lawless
patent: 4077832 (1978-03-01), Robertson et al.
patent: 4092208 (1978-05-01), Brice et al.
H. Takeuchi et al., "Faraday Rotation and Optical Absorption . . . ", 1973, 4789-4790, J. Appl. Phys., vol. 44, No. 10.
H. Takeuchi, "The Faraday Effect of Bismuth Substituted . . . ", 1975, 1903-1910, J. Journal of Applied Physics, vol. 14, No. 12.

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