Process for preparation of semiconductor device

Details Process for preparation of semiconductor device Process for preparation of semiconductor device

1991-08-21

1996-01-30

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437192, 437200, H01L 2100

Patent

active

054878110

ABSTRACT:
A process for the preparation of a semiconductor device, includes the steps of, (a) foxing a mask including an organic film on a laminated film consisting of a metal silicide layer and a non-single crystalline silicon layer formed over a substrate on which an oxide layer is formed, (b) etching the laminated film under a plasma atmosphere of a mixed gas including a chlorine gas and an oxygen gas by heating the substrate to a temperature of 60.degree. C. or more to fabricate the laminated film into an almost vertical pattern in section, and (c) removing the mask from the laminated film. In this process, the laminated film consisting of a metal silicide layer on which a resist mask is formed, and a polycrystalline silicon layer formed over a substrate, can be given vertical patterning profile edge, and the uniformity of the etching rate in the substrate is enhanced. Further, as a deposition gas is not used in the present process, the occurrence of loose particles is restrained.

REFERENCES:
patent: 4478678 (1984-10-01), Watanabe
patent: 4539742 (1985-09-01), Kanzaki et al.
patent: 4744861 (1988-01-01), Matsunaga et al.
patent: 4778563 (1988-10-01), Stone
patent: 4784720 (1988-11-01), Douglas
patent: 4789426 (1988-12-01), Pipkin
patent: 4799991 (1989-01-01), Dockrey
patent: 4833096 (1989-05-01), Huang et al.
patent: 5007982 (1991-04-01), Tson
patent: 5030590 (1991-07-01), Amini et al.
patent: 5110411 (1992-05-01), Long
"Precision 5000 Etch: Tungsten Silicide Process Capability"; Applied Materials, Inc., vol. VII, No. 1, Spring 1990, by Lum et al., pp. 1-19.
"Plasma Etching of Composite Silicide Gate Electrodes", F. R. White et al, 1046 Journal of the Electrochemical Society, vol. 129 (1982) Jun., No. 6, pp. 1330-1335.
"The Control of Plasma Etch Selectivities Via Oxygen Addition to Chlorine Based Plasmas", Francine Y. Robb, 8182 Motorola Technical Developments, 4(1984) Apr., No. 1, pp. 28-29.
"Perfect Selective and Highly Anisotropic Electron Cyclotron Resonance Plasma Etching for Wsi.sub.x /poly-Si at Electron Cyclotron Resonance Position", Seiji Samukawa et al, 8257b Journal of Vacuum Science & Technology Part B, 8(1990) Sep./Oct., No. 5, pp. 1062-1067.

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