Process for preferentially etching polycrystalline silicon

Details Process for preferentially etching polycrystalline silicon Process for preferentially etching polycrystalline silicon

1987-11-02

1989-01-24

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, H01L 21302

Patent

active

047999918

ABSTRACT:
This disclosure relates to a process for etching polycrystalline silicon in preference to single crystal silicon. Polycrystalline silicon is anisotropically etched in a plasma which inclues a noncarbonaceus silicon etching compound such as chlorine together with about 0.4-1.5 percent by volume of oxygen. The process is used to fabricate semiconductor devices which require the etching of polycrystalline silicon in the presence of exposed monocrystalline silicon.

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patent: 4422897 (1983-12-01), Horwitz et al.
patent: 4426246 (1984-01-01), Kravitz et al.
patent: 4430151 (1984-02-01), Tsukada
patent: 4468285 (1984-08-01), Bayman et al.
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patent: 4490209 (1984-12-01), Hartman
patent: 4528066 (1985-07-01), Merkling, Jr. et al.
Coburn, "Plasma-Assisted Etching", source unknown.
Horwitz, "Reactive Sputter Etching of Silicon with Very Low Mask-Material Etch Rates", IEEE Transactions on Electron Devices, ined-28, No. 11, Nov. 1981, pp. 1320-1323.
Cabral et al., "Fabrication of Submicrometer Size Structures in Si Using SiCl.sub.4 /O.sub.2 Reactive Ion Etching", source unknown.

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