Process for polysilicon with freon 11 and another gas

Details Process for polysilicon with freon 11 and another gas Process for polysilicon with freon 11 and another gas

1986-11-17

1988-04-12

Czaja, Donald E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 20419232, 252 791, H01L 21306

Patent

active

047372354

ABSTRACT:
A process for etching polysilicon is provided wherein CFCl.sub.3 (Freon 11) and another gas, typically SF.sub.6, is pre-mixed in a storage chamber before routing to an etching chamber. This process prevents condensation of the Freon 11 in a routing line and resultant failure of a mass flow controller due to liquid ingestion. Furthermore, since the gases are pre-mixed and only one mass flow controller is used, the accuracy of the mixture is not dependent on the precision of the mass flow controller.

REFERENCES:
patent: 4214946 (1980-07-01), Forget et al.
patent: 4255230 (1981-03-01), Zajac
patent: 4345610 (1982-08-01), Herter et al.
patent: 4353777 (1982-10-01), Jacob
patent: 4442338 (1984-04-01), Yamazaki
patent: 4447290 (1984-05-01), Matthews
patent: 4472237 (1984-09-01), Deslauriers et al.
patent: 4473435 (1984-09-01), Zafiropoulo et al.

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