Process for polishing semiconductor surfaces and polishing agent

Details Process for polishing semiconductor surfaces and polishing agent Process for polishing semiconductor surfaces and polishing agent

1976-12-09

1977-08-23

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 252 791, 252313R, C09K 1300

Patent

active

040438619

ABSTRACT:
Process for polishing semiconductor surfaces, especially gallium phosphide urfaces, with an aqueous suspension of aluminum and/or gallium hydroxide precipitated from the elements by an alkaline compound at the pH value between 7.5 and 8, the suspension further containing an alkali hypochlorite in such an amount that in addition to 0.05-0.6 mol hydroxide per liter, the molar content of hypochlorite will be three to ten times that of the hydroxide; the surfaces are subjected to a buffing action with said suspension. The invention also relates to the polishing agent used in the process.

REFERENCES:
patent: 3342652 (1967-09-01), Reisman et al.
patent: 3738882 (1973-06-01), Basi
patent: 3775201 (1973-11-01), Basi
patent: 3869324 (1975-03-01), Basi et al.

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