Process for polishing glass substrate

Details Process for polishing glass substrate Process for polishing glass substrate

2006-12-22

2009-11-24

Hendricks, Keith D (Department: 1794)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S079000, C216S094000

Reexamination Certificate

active

07622050

ABSTRACT:
A process for polishing a glass substrate required to have high-degree of flatness and smoothness, is provided. A preliminarily polished glass substrate is applied with a surface treatment by a first-step gas-cluster ion beam etching to improve the flatness, and then, the glass substrate is applied with a surface treatment by a second-step gas-cluster ion beam etching having different irradiation conditions of those of the first-step gas-cluster ion beam etching to improve the surface roughness, whereby the glass substrate is finish-polished to have a flatness of at most 0.05 μm and a surface roughness (Rms) of at most 0.25 nm.

REFERENCES:
patent: 5626935 (1997-05-01), Goto et al.
patent: 08-120470 (1996-05-01), None
patent: 2003-505891 (2003-02-01), None
patent: 02/05315 (2002-01-01), None
patent: WO/2002/05315 (2002-01-01), None
Allen (Gas-cluster ion-beam smoothing of chemo-mechanical-polish processed GaSb substrates; Journal of Electronic Materials; Aug. 2003).
Human translation of paragraph 21 of the previously applied Naosuke reference; translated by Irina Knizhnik, USPTO translator on Jan. 15, 2009.
U.S. Appl. No. 11/779,441, filed Jul. 18, 2007, Otsuka, et al.

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