Process for plasma etching polysilicon to produce rounded profil

Details Process for plasma etching polysilicon to produce rounded profil Process for plasma etching polysilicon to produce rounded profil

1986-05-19

1988-01-12

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156657, 1566591, 156662, 437233, 437249, 437981, H01L 21308

Patent

active

047189738

ABSTRACT:
In a silicon integrated circuit manufacturing process a layer of polysilicon is ion implanted with an n-type dopant and etched through a mask with a fluorine:chlorine mixture. The etchant undercuts at the mask to an extent dependent on the ratio of chlorine:fluorine and on the dopant level. By appropriately selecting that ratio and dopant level, polysilicon islands having a rounded profile can be achieved, this being most efficacious for subsequent deposition onto the polysilicon.

REFERENCES:
patent: 3892606 (1975-07-01), Chappelow et al.
patent: 4473435 (1984-09-01), Zafiropoulo et al.
patent: 4554728 (1985-11-01), Shepard
Adler, "Combined Shallow and Deep Junction Self-Aligned MOSFET Process", IBM TDB, vol. 24, No. 8, Jan. 1982, pp. 4186-4187.

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