Process for plasma deposition and plasma CVD apparatus

Details Process for plasma deposition and plasma CVD apparatus Process for plasma deposition and plasma CVD apparatus

1995-06-07

1996-12-17

Kunemund, Robert

Coating apparatus

Gas or vapor deposition

With treating means

118712, 118664, 20429803, 156345, C23C 1600

Patent

active

055849334

ABSTRACT:
A process for plasma deposition is disclosed, which permits increasing the plasma deposition processing capacity. In a single substrate processing plasma CVD apparatus, chamber plasma cleaning (II) is done once for every plural deposition cycles (I). If necessary, for each deposition cycle the intensity of the electric field applied between pair electrodes is varied (for instance, increased to an extent corresponding to the deposition capacity reduction).

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Pliskin, Alternating Wavelength Vampo, IBM Technical Disclosure Bulletin, vol. 13 No. 3, pp. 672-673.

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