Process for performing variable selectivity polysilicon etch

Details Process for performing variable selectivity polysilicon etch Process for performing variable selectivity polysilicon etch

1987-01-06

1988-12-06

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 156662, H01L 21302

Patent

active

047894261

ABSTRACT:
A method for controllably varying the selectivity of reactive etching process for etching a polysilicon film, involves the addition of an adjustable amount of oxygen (O.sub.2) to a chlorine based chemistry (e.g. Cl.sub.2, HCl) during the etching process. The adjustable amount of oxygen permits the selectivity to be varied from a low to moderate rate at the beginning of the etch and through most of the film thickness to as high a selectivity as is required for overetch, to allow anisotropic removal of polysilicon without penetrating thin oxide. Selectivity is effectively proportional to the oxygen concentration and may be varied from a low to moderate selectivity value (e.g. 20:1) to a high selective value (e.g. 100:1) of polysilicon oxide etch rate in a controlled manner.

REFERENCES:
patent: 4543597 (1985-09-01), Shibata
patent: 4615764 (1986-10-01), Bobbio et al.

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