Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1979-04-30
1981-05-12
Massie, Jerome W.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
29591, 156656, 156664, 156665, H01L 21283, H01L 21308
Patent
active
042670128
ABSTRACT:
A process for patterning regions on a semiconductor structure comprises the steps of forming a first layer of an alloy of tungsten and titanium on the semiconductor structure, forming a conductive layer of aluminum or chemically similar material on the surface of the tungsten-titanium alloy, removing the undesired portions of the conductive layer by etching with a plasma and removing the thereby exposed portions of the tungsten-titanium alloy layer by chemical etching.
REFERENCES:
patent: 3480412 (1969-11-01), Duffek et al.
patent: 3615956 (1971-10-01), Irving et al.
patent: 3881884 (1975-05-01), Cook et al.
patent: 3881971 (1975-05-01), Greer et al.
patent: 3900944 (1975-08-01), Fuller et al.
patent: 4021270 (1977-05-01), Hunt et al.
patent: 4057460 (1977-11-01), Saxena et al.
patent: 4073669 (1978-02-01), Heinecke et al.
patent: 4094732 (1978-06-01), Reinberg
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4172004 (1979-10-01), Alcorn et al.
Lehrer William I.
Pierce John M.
Radigan Kenneth J.
Colwell Robert C.
Fairchild Camera & Instrument Corp.
Massie Jerome W.
Pollock Michael J.
Winters Paul J.
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