Process for nickel silicide Ohmic contacts to n-SiC

Details Process for nickel silicide Ohmic contacts to n-SiC Process for nickel silicide Ohmic contacts to n-SiC

2007-11-20

2007-11-20

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S655000, C438S660000, C438S682000, C257S077000, C257SE29143, C257SE21054

Reexamination Certificate

active

11356065

ABSTRACT:
A Ni2Si-nSiC Ohmic contact is formed by pulsed laser ablation deposition (PLD) of Ni2Si source target deposited on a n-SiC substrate or SiC substrate wafer with SiC epilayer. The Ni2Si Ohmic contact on n-SiC was rapid thermal annealed at 950° C. for 30 s in a N2ambient. The resultant Ohmic contact is characterized by excellent current-voltage (I-V) characteristics, an abrupt void free contact-SiC interface, retention of the PLD as-deposited contact layer width, smooth surface morphology, and absence of residual carbon within the contact layer or at the interface. The detrimental effects of contact delamination due to stress associated with interfacial voiding; and wire bond failure, non-uniformity of current flow and SiC polytype alteration due to extreme surface roughness; have been eliminated as has electrical instability associated with carbon inclusions at the contact-SiC interface, after prolonged high temperature and power device operation.

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