Process for modified oxidation of a semiconductor substrate usin

Details Process for modified oxidation of a semiconductor substrate usin Process for modified oxidation of a semiconductor substrate usin

1998-09-16

2000-09-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438765, 438766, 438767, 438769, 438770, 438774, H01L 2131, H01L 21469

Patent

active

061142573

ABSTRACT:
A process for thermal oxidation of a semiconductor substrate comprising exposing the substrate to a chlorine plasma, and then heating the substrate in an oxidizing ambient. The substrate may comprise silicon, germanium, or a combination thereof. The heating step may further comprise heating at a temperature of between about 750.degree. C. and about 850.degree. C.

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"Kinetics of the Thermal Oxidation of Silicon in O2/HCl Mixtures" by D.W. Hess & B.E. Deal. J. Electrochem. Soc.: Solid State Science & Technology, May, 1977. pp. 735-739.
"Silicon Processing for the VLSI Era, Volume 1: Process Technology" by Stanley Wolf & Richard N. Tauber. Published by Lattice Press, 1986. pp. 211-219.
"Analysis of the Etching of Silicon in an Inductively Coupled Chlorine Plasma Using Laser Thermal Desorption" by J. Y. Choe, I. P. Herman, and V. M. Donnelly. J. Vac. Sci. Technol. A 15(6) Nov./Dec. 1997. pp 3024-3026.
John L. Vossen and Werner Kern, eds., Thin Film Processes, Academic Press: New York, p. 544, 1978.

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