Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-08-05
1999-03-16
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438633, 438636, 438637, 438648, H01L 21283, H01L 21311
Patent
active
058829997
ABSTRACT:
A process for making metal features in an insulator layer in integrated circuits is disclosed. The process involves depositing an antireflective coating layer of a material such as TiN over the insulator layer patterning both the ARC and the insulator with a series of channels or apertures vias and depositing a metal such as tungsten over the ARC and in the channels and apertures. The metal can then be planarized by CMP using the insulator as an etch top.
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Anderson Christine Ann
Buker Edward Daniel
Cronin John Edward
Kerszykowski Gloria Jean
Thomas David Charles
International Business Machines - Corporation
Quach T. N.
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