Process for manufacturing thick suspended structures of...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S053000, C257SE21564, C257SE21573

Reexamination Certificate

active

07871894

ABSTRACT:
A process for manufacturing a suspended structure of semiconductor material envisages the steps of: providing a monolithic body of semiconductor material having a front face; forming a buried cavity within the monolithic body, extending at a distance from the front face and delimiting, with the front face, a surface region of the monolithic body, said surface region having a first thickness; carrying out a thickening thermal treatment such as to cause a migration of semiconductor material of the monolithic body towards the surface region and thus form a suspended structure above the buried cavity, the suspended structure having a second thickness greater than the first thickness. The thickening thermal treatment is an annealing treatment.

REFERENCES:
patent: 6208007 (2001-03-01), Babic et al.
patent: 6518147 (2003-02-01), Villa et al.
patent: 6787052 (2004-09-01), Vaganov
patent: 6790751 (2004-09-01), Tsuruta et al.
patent: 6833079 (2004-12-01), Giordani
patent: 6870445 (2005-03-01), Kawakubo et al.
patent: 7164188 (2007-01-01), Farrar et al.
patent: 7354786 (2008-04-01), Benzel et al.
patent: 7537989 (2009-05-01), Nakai et al.
patent: 2003/0111665 (2003-06-01), Geusic et al.
patent: 2003/0168711 (2003-09-01), Villa et al.
patent: 2003/0181018 (2003-09-01), Geusic et al.
patent: 2004/0129998 (2004-07-01), Inoh et al.
patent: 2004/0227207 (2004-11-01), Barlocchi et al.
patent: 2004/0251781 (2004-12-01), Bouche et al.
patent: 2005/0067294 (2005-03-01), Choe et al.
patent: 2005/0172717 (2005-08-01), Wu et al.
patent: 2007/0020876 (2007-01-01), Blomiley et al.
patent: 1577656 (2005-09-01), None
Sato T et al., “Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique”, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, vol. 43, No. 1, Jan. 2004, pp. 12-18, XP001191452.
European Search Report for EP 05 42 5676 dated Jan. 11, 2006.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for manufacturing thick suspended structures of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing thick suspended structures of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing thick suspended structures of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2689405

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.