Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With semiconductor element forming part
Reexamination Certificate
2006-08-15
2006-08-15
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With semiconductor element forming part
C438S065000, C257SE31127, C257S680000
Reexamination Certificate
active
07091585
ABSTRACT:
A process for fabricating a semiconductor device is provided. The process integrates a cutting film process into the front-end of semiconductor process. The cutting film is directly formed on the curved surface of the micro-lens or a passivation layer is formed on the micro-lens before covering the passivation layer with the cutting film. In addition to micro-particle contamination due to sawing, the process is able to simplify chip packaging and reduce the size of a photosensitive module.
REFERENCES:
patent: 4827118 (1989-05-01), Shibata et al.
patent: 6249034 (2001-06-01), Li
patent: 6534340 (2003-03-01), Karpman et al.
Lee Kuang
Pan Jui-Hsiang
Sun Cheng-Kuang
J.C. Patents
Smith Bradley K.
United MIcroelectronics Corp.
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