Process for manufacturing segmented channel structures

Details Process for manufacturing segmented channel structures Process for manufacturing segmented channel structures

1990-12-21

1992-03-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156647, 156657, 1566591, 156662, 346140R, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

050965352

ABSTRACT:
In semiconductor technologies such as thermal ink jet printhead fabrication, there exists a need for the precise placement of channels in a substrate. Due to errors in plane alignment in semiconductor substrates, channel structures tend to widen dimensions, thus lowering precision. A one-step anisotropic etching process is disclosed for accurately making channel structures, as well as reservoir structures. Channel structures are formed by segmenting the channel, such that during the anisotropic etching, thin walls between the segments break down before the completion of the etch. Widening of channels is greatly reduced, thus increasing precision. During such a one-step process, larger structures, such as a reservoir, can be formed during the same step.

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patent: 4915718 (1990-04-01), Desai
patent: 4957592 (1990-09-01), O'Neill et al.

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