Process for manufacturing MOS-type integrated circuits

Details Process for manufacturing MOS-type integrated circuits Process for manufacturing MOS-type integrated circuits

1995-09-06

1997-09-02

Tsai, Jey

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438453, 438258, 438201, 438227, H01L 21265

Patent

active

056630808

ABSTRACT:
A process for producing integrated circuits including the steps of: selectively growing field insulating regions of insulating material extending partly inside a substrate having a given type of conductivity; depositing a polycrystalline silicon layer on the substrate; shaping the polycrystalline silicon layer through a mask; and selectively implanting ions of the same conductivity type as the substrate, using the shaping mask, through the field insulating regions. The implanted ions penetrate the substrate and form channel stopper regions beneath the field insulating regions.

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