Process for manufacturing high-sensitivity capacitive and resona

Details Process for manufacturing high-sensitivity capacitive and resona Process for manufacturing high-sensitivity capacitive and resona

1998-07-10

2000-07-18

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 51, 438 52, H02L 2348

Patent

active

060906383

ABSTRACT:
A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.

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Kuehnel, Wolfgang et al., "A Surface Micromachined Silicon Accelerometer With On-Chip Detection Circuitry," Sensors And Actuators, A 45, (1994) pp. 7-16.

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