Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon
Patent
1987-09-08
1989-05-23
Chaudhuri, Olik
Metal treatment
Barrier layer stock material, p-n type
With non-semiconductive coating thereon
148 331, 148DIG135, 437184, 437229, 437974, 437925, H01L 21312
Patent
active
048327611
ABSTRACT:
A process for manufacturing gallium arsenide microwave circuits makes use of a nonphotosensitive acid resist as an adhesive for holding the "front side" of a gallium arsenide wafer onto a substrate while operations such as etching "via holes" into the wafer are being performed on the "back side" of the wafer. The process comprises front side processing, spinning the nonphotosensitive acid resist onto the frontside of the GaAs wafer, baking the protective acid resist coating onto the wafer, spinning the acid resist onto a substrate, joining the wafer to the substrate, thinning the wafer, and performing backside processing.
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Claytor Philippe R.
Geissberger Arthur E.
Chaudhuri Olik
ITT Gallium Arsenide Technology Center, A Division of ITT Corpor
Quach T. N.
Twomey Thomas N.
Walsh Robert A.
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