Process for manufacturing discrete electronic devices

Details Process for manufacturing discrete electronic devices Process for manufacturing discrete electronic devices

1997-03-07

1999-08-03

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438311, 438348, 438612, 438613, 438701, 438978, H01L 21331, H01L 218222, H01L 2144, H01L 21311

Patent

active

059337150

ABSTRACT:
A process for manufacturing discrete electronic devices with active structures in an SOI (silicon-on-insulator) substrate which is thickened by an epitaxial layer and whose surface has a <100> orientation, said process comprising the steps of: anisotropically etching the first silicon layer to form a moat having a diameter tapering in the direction of the insulator layer, said moat extending to the insulator layer; forming an insulating layer on the sidewalls of the moat; removing a portion of the insulator layer adjoining the moat to expose a portion of the second silicon layer, which is separated from the first silicon layer by the insulator layer; forming the active structure in the second silicon layer below the portion of the insulator layer which was removed; and depositing a contact layer on the insulating layer and the active element for making contact to the active structure.

REFERENCES:
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patent: 5591675 (1997-01-01), Kim et al.
ANAD, "X-Band High-Burnout Silicon-Schottky Mixer Diodes" IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. CHMT-1., No. 4, Dec. 1978.
Patent Abstract of Japan, vol. 018, No. 270 (E-1552), May 23, 1994 -& JP 06 0452664 (Fujitsu Ltd), Feb. 18, 1994.
Copy of European Search Report for 97102193.6, dated Mar. 30, 1998.
Menz, et al., Mikrosystemtechnil Fur Ingenieure, VCH-Verlagsgesellschaft, pp. 171-184, 1993. (w/English synopsis).
G. Kaminsky, Micromachining of Silicon Mechanical Structures, J. Vac. Sci. Technol., B, vol. 3, No. 4, pp. 1015-1024, Jul./Aug. 1985.
German Examination Report dated Dec. 9, 1996.

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