Process for manufacturing boron-doped gallium arsenide single cr

Details Process for manufacturing boron-doped gallium arsenide single cr Process for manufacturing boron-doped gallium arsenide single cr

1983-04-15

1985-07-09

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156607, 156617SP, 156DIG70, C30B 1504

Patent

active

045280614

ABSTRACT:
A process for manufacturing boron-doped GaAs single crystals which comprises preparing a mixture of boron, gallium and arsenic covered by a liquid B.sub.2 O.sub.3 encapsulant, melting the mixture, pulling up boron-doped GaAs crystals from the mixture melts in accordance with the LEC method, crushing those crystals into small pieces after removing the seed end therefrom, remelting those pieces in the presence of B.sub.2 O.sub.3, and pulling up single crystals from the mixture melts in accordance with the LEC method.

REFERENCES:
patent: 4200621 (1980-04-01), Liaw et al.
patent: 4303464 (1981-12-01), Suzuki et al.
AuCoin et al.; Liquid Encapsulated Compounding and Czochralski Growth of Semi-Insulating GaAs; Solid State Tech.; Jan. '79, pp. 59-62 & 67.

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