Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-01-04
2005-01-04
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S107000, C438S118000, C438S125000, C438S406000, C438S456000, C438S533000, C438S696000, C438S700000
Reexamination Certificate
active
06838362
ABSTRACT:
The process for manufacturing a through insulated interconnection is performed by forming, in a body of semiconductor material, a trench extending from the front (of the body for a thickness portion thereof; filling the trench with dielectric material; thinning the body starting from the rear until the trench, so as to form an insulated region surrounded by dielectric material; and forming a conductive region extending inside said insulated region between the front and the rear of the body and having a higher conductivity than the first body. The conductive region includes a metal region extending in an opening formed inside the insulated region or of a heavily doped semiconductor region, made prior to filling of the trench.
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Ferrari Paolo
Mastromatteo Ubaldo
Fourson George
Garcia Joannie Adelle
Graybeal Jackson Haley LLP
Jorgenson Lisa K.
Santarelli Bryan A.
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