Process for manufacturing a semiconductor wafer integrating...

Details Process for manufacturing a semiconductor wafer integrating... Process for manufacturing a semiconductor wafer integrating...

2005-03-22

2005-03-22

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S238000, C438S453000, C438S620000

Reexamination Certificate

active

06869856

ABSTRACT:
A process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling are disclosed. The method includes providing a wafer of semiconductor material having a substrate; forming a plurality of first mutually adjacent trenches, open on a first face of the wafer, which have a depth and a width and define walls); by thermal oxidation, completely oxidizing the walls and filling at least partially the first trenches, so as to form an insulating structure of dielectric material; and removing one portion of the substrate comprised between the insulating structure and a second face of the wafer, opposite to the first face of the wafer.

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