Process for manufacturing a semiconductor device including heat

Details Process for manufacturing a semiconductor device including heat Process for manufacturing a semiconductor device including heat

1992-08-21

1994-09-20

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437 29, 437238, 437247, H01L 21336

Patent

active

053489004

ABSTRACT:
A process for manufacturing a semiconductor device, including the steps of: forming a oxide film over the entire surface of a semiconductor substrate formed with a gate electrode having side walls on opposite sides thereof with intervention of a gate oxide film, followed by implanting an impurity into a predetermined region; subjecting the substrate to a first heat treatment; removing the oxide film existing in the predetermined region; and subjecting the substrate to a second heat treatment in an ammonia or oxygen gas atmosphere.

REFERENCES:
patent: 4329773 (1982-05-01), Geipel, Jr. et al.
patent: 4525378 (1985-06-01), Schwabe et al.
patent: 4786609 (1988-11-01), Chen
patent: 5130266 (1992-07-01), Huang et al.
patent: 5166087 (1992-11-01), Kakimoto et al.

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