Process for manufacturing a semiconductor device

Details Process for manufacturing a semiconductor device Process for manufacturing a semiconductor device

2006-10-17

2006-10-17

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21497

Reexamination Certificate

active

07122450

ABSTRACT:
A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019to 2×1022/cm3, preferably 1×1020to 1×1021/cm3and oxygen at a concentration of 5×1017to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.

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