Process for manufacturing a semiconductor device

Details Process for manufacturing a semiconductor device Process for manufacturing a semiconductor device

2005-08-23

2005-08-23

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S792000

Reexamination Certificate

active

06933250

ABSTRACT:
A process of manufacturing a semiconductor device uses catalytic chemical vapor deposition. In the process, a reaction chamber containing a catalyzer and a substrate has gasses, including silane, ammonia, and hydrogen supplied to the reaction chamber. The gases are brought into contact with the catalyzer and then with the substrate to deposit a silicon nitride film.

REFERENCES:
patent: 3856587 (1974-12-01), Yamazaki et al.
patent: 5679404 (1997-10-01), Patten et al.
patent: 6069094 (2000-05-01), Matsumura et al.
patent: 6225241 (2001-05-01), Miyoshi
patent: 6375756 (2002-04-01), Ishibashi
patent: 1225093 (1989-09-01), None
patent: 6-295901 (1994-10-01), None
patent: 10-209151 (1998-08-01), None
patent: 11219952 (1999-08-01), None
Ishibashi, K; “Development of the Cat-CVD apparatus and its feasibility for mass production”,Thin Solid Films, Elsevier Sequoia, NL, vol. 395, No. 1-2, pp. 55-60 (Sep. 3, 2001).
Minamikawa, T. et al.; “Preparation of SiNxpassivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD”,Preparation and Characterization, Elsevier Sequoia, NL, vol. 395, No. 1-2, pp. 284-287 (Sep. 3, 2001).

Affiliated with

Also associated with

Rating

Process for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3480962