Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-11-16
2000-07-04
Wilczewski, Mary
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438656, 438685, 438688, 438785, 438973, 438648, 257915, 257763, 257764, 257767, H01L 21768, H01L 213205
Patent
active
060838302
ABSTRACT:
A process for producing a semiconductor device comprising the steps of forming a titanium film having a (002) orientation, forming a titanium nitride film on the titanium film to such a thickness as allows the titanium nitride film to follow the orientation of the titanium film, and forming an aluminum alloy film on the titanium nitride film, thereby to form a layer structure for wiring including the aluminum alloy film having a (111) orientation.
REFERENCES:
patent: 5523259 (1996-06-01), Merchant et al.
patent: 5580823 (1996-12-01), Hegde et al.
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5652464 (1997-07-01), Liao et al.
patent: 5776831 (1998-07-01), Padmanabhan et al.
Lin Yung A.
Sharp Kabushiki Kaisha
Wilczewski Mary
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