Process for manufacturing a semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438656, 438685, 438688, 438785, 438973, 438648, 257915, 257763, 257764, 257767, H01L 21768, H01L 213205

Patent

active

060838302

ABSTRACT:
A process for producing a semiconductor device comprising the steps of forming a titanium film having a (002) orientation, forming a titanium nitride film on the titanium film to such a thickness as allows the titanium nitride film to follow the orientation of the titanium film, and forming an aluminum alloy film on the titanium nitride film, thereby to form a layer structure for wiring including the aluminum alloy film having a (111) orientation.

REFERENCES:
patent: 5523259 (1996-06-01), Merchant et al.
patent: 5580823 (1996-12-01), Hegde et al.
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5652464 (1997-07-01), Liao et al.
patent: 5776831 (1998-07-01), Padmanabhan et al.

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