Process for manufacturing a semiconductor device

Details Process for manufacturing a semiconductor device Process for manufacturing a semiconductor device

1999-11-18

2000-12-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438637, 438680, 438681, H01L 214763, H01L 2144

Patent

active

06156656&

ABSTRACT:
A process for manufacturing a semiconductor device having a buried electrically conductive film includes: a first step of, with heating at a first temperature a substrate on which an insulating film having a depression is formed, depositing a first copper film having a sufficient thickness for moderating a step defined by the depression, on a surface of the insulating film by a metal organic chemical vapor deposition method; and a second step of, with heating the substrate at a second temperature higher than the first temperature, depositing a second copper film having a sufficient thickness for filling the depression by a metal organic chemical vapor deposition method, wherein a buried electrically conductive layer composed of the first and second copper films is formed in the depression by the first and second steps.

REFERENCES:
patent: 4948623 (1990-08-01), Beach et al.
patent: 5574247 (1996-11-01), Nishitani et al.
patent: 5893752 (1999-04-01), Zhang
patent: 6090702 (2000-07-01), Okamoto
Awaya et al, "The Characteristics of Blanket Copper CVD Deep Submicron Via Filling", VLSI Technologhy, 1993. Digest of Technical Papers, 1993. Symposium on 1993. pp: 125-126.
Awaya et al, "Carrier-gas effects on characteristics of copper chemical vapor deposition using hexafluoro-acetylacetonate-copper (1) trimethylvinylsilane", Thin Solid Films, 262 (1995), pp. 12-19.

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