Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-02-12
2011-10-25
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S138000, C257SE21427
Reexamination Certificate
active
08044462
ABSTRACT:
An electronic device includes a semiconductor substrate of a first conductivity type and a drain layer adjacent the semiconductor substrate and having a plurality of drains. The drain layer includes a first semiconductor layer of the first conductivity type adjacent the semiconductor substrate, and at least one second semiconductor layer of a second conductivity type adjacent the first semiconductor layer. Moreover, a plurality of first column regions of the first conductivity type extends through the at least one second semiconductor layer to contact the first semiconductor layer. A plurality of second column regions of the second conductivity type delimits the plurality of first column regions. Furthermore, a plurality of body regions of the second conductivity type are adjacent respective ones of the plurality of second column regions.
REFERENCES:
patent: 6703665 (2004-03-01), Nakamura
patent: 2003/0148559 (2003-08-01), Onishi et al.
patent: 0780897 (1997-06-01), None
patent: 0975024 (2000-01-01), None
patent: 1081768 (2001-03-01), None
Arcuri Luigi
Grimaldi Antonio Giuseppe
Micciche Monica
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Lindsay, Jr. Walter L
Patel Reema
STMicroelectronics S.R.L.
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