Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Reexamination Certificate
2007-08-21
2007-08-21
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
C438S466000, C438S597000, C257S002000, C257S295000, C257SE21665, C257SE27004
Reexamination Certificate
active
10902508
ABSTRACT:
A process for manufacturing a phase change memory array, includes the steps of: forming a plurality of PCM cells, arranged in rows and columns; and forming a plurality of resistive bit lines for connecting PCM cells arranged on a same column, each resistive bit lines comprising a respective phase change material portion, covered by a respective barrier portion. After forming the resistive bit lines, electrical connection structures for the resistive bit lines are formed directly in contact with the barrier portions of the resistive bit lines.
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Bez Roberto
Pellizer Fabio
Anya Igwe U.
Baumeister B. William
Han Hai
Jorgenson Lisa K.
Seed IP Law Group PLLC
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