Process for manufacturing a large-scale integration MOS...

Details Process for manufacturing a large-scale integration MOS... Process for manufacturing a large-scale integration MOS...

2006-11-22

2011-10-04

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

By application of corpuscular or electromagnetic radiation

C257SE23114, C257SE21347, C257SE21475, C257SE21482

Reexamination Certificate

active

08030192

ABSTRACT:
A process for manufacturing a MOS device and the MOS device manufactured thereby are disclosed. The process includes in a semiconductor layer forming a gate structure above the semiconductor layer; forming a first doped region within a first surface portion of the semiconductor layer; and irradiating the first doped region with electromagnetic radiation, to carry out annealing thereof. Prior to the irradiating step, a dielectric mirror is formed above a second surface portion of the semiconductor layer. The dielectric mirror, which may be of the Bragg-reflector type, reflects at least in part the electromagnetic radiation, and protects underlying regions from the electromagnetic radiation.

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European Search Report, EP05425836, Jul. 3, 2006.

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