Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-05-24
1997-05-27
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
20419217, 438660, 438659, 438643, H01L 21283
Patent
active
056332009
ABSTRACT:
Disclosed herein is a process for manufacturing a smooth, large grain tungsten nitride film. Under the process, tungsten nitride is deposited by physical vapor deposition in an environment of nitrogen. The nitrogen content of the environment is selected at an operating level wherein primarily tungsten is sputtered with only a light nucleation of tungsten nitride being evenly distributed in the tungsten. A separate grain growth step is subsequently conducted in an environment of nitrogen to grow a film of large grain tungsten nitride. Also disclosed is a stack structure suitable for MOS memory circuits incorporating a lightly nitrided titanium salicide diffusion barrier with a covering of tungsten nitride. The stack structure is formed in accordance with the tungsten nitride film manufacturing process and exhibits high thermal stability, low resistivity, long range agglomeration blocking, and high surface smoothness.
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Micro)n Technology, Inc.
Quach T. N.
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