Process for manufacturing a gallium phosphide electroluminescent

Details Process for manufacturing a gallium phosphide electroluminescent Process for manufacturing a gallium phosphide electroluminescent

1976-06-14

1978-03-21

Ansher, Harold

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156649, 156656, 156662, 357 17, 357 60, H01L 21225, H01L 21308, H01L 3300, H01S 319

Patent

active

040802450

ABSTRACT:
When gallium phosphide is etched with hot phosphoric acid from the surface of a crystal having a (1 1 1) plane, the etched surface becomes a flat and smooth plane inclined at an angle of 45.degree. to 55.degree. to the (1 1 1) plane. Accordingly, when an electroluminescent diode is manufactured by forming a p-n junction on a gallium phosphide crystal having a (1 1 1) plane and etching the crystal with a hot concentrated phosphoric acid etching solution to form a mesa structure, the side faces of the resulting crystal becomes inclined to the plane of the junction at an angle of nearly 45.degree. so that the visible rays generated in the p-n junction are totally reflected on the side faces, thus markedly increasing the intensity of emitted rays in the direction of the optical axis perpendicular to the principal plane of the p-n junction.

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