Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1976-02-17
1980-03-25
Esposito, Michael F.
Static information storage and retrieval
Systems using particular element
Ferroelectric
427 58, 427100, 427125, 427126, 4272481, 4272557, 427250, 427261, 427309, 427314, 427380, 4273833, 427404, 4274193, 4274194, G11C 1122, B05D 512
Patent
active
041953550
ABSTRACT:
A process for manufacturing a ferroelectric device includes the steps of chemically cleaning a substrate, followed by radio frequency etching of the substrate. The substrate is then pre-heated. A first electrical contact is then formed on the substrate, and over a portion of the first electrical contact there is vapor deposited a stable thin film of potassium nitrate. Then a second electrical contact is formed over at least a part of the thin film of potassium nitrate. A covering of silicon monoxide is then vacuum deposited over the assemblage of the first and second electrical contacts and the potassium nitrate. The assemblage is then annealed for approximately twenty-four hours at a temperature of approximately 160.degree. C.
REFERENCES:
patent: 3381256 (1968-04-01), Schuller et al.
patent: 3405440 (1968-10-01), Nolta et al.
patent: 3607386 (1971-09-01), Galla et al.
patent: 3877982 (1975-04-01), Coldren et al.
patent: 3939292 (1976-02-01), Rohrer
Burt Pamela S.
Esposito Michael F.
Technovation, Inc.
Weiner Irving M.
Yedlin Melvin
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