Process for manufacturing a dynamic random access memory cell

Details Process for manufacturing a dynamic random access memory cell Process for manufacturing a dynamic random access memory cell

1988-02-23

1990-07-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 45, 437 47, 437 52, H01L 27108, H01L 21265

Patent

active

049450662

ABSTRACT:
A process for manufacturing a dynamic random access memory (DRAM) cell wherein an improvement is made in an occurrence of soft errors in operation of a memory device, said soft errors resulting from alpha particles being produced from uranium-series materials included in fabricating materials during fabrication of memory chips, especially in the package of the chip. In a single transistor memory cell, through forming boron layers below a storage capacitor region and below a drain region of the transistor coupled with a bit line, a barrier is formed against the minority carriers resulting from the alpha particles within the substrate. Also, through enlarging the storage capacitor region toward a field oxide layer just around the capacitor perimeter, a capacitance of the storage capacitor is increased so that the influence of the soft errors is negligible.

REFERENCES:
patent: 4240092 (1980-12-01), Kuo
patent: 4352236 (1982-10-01), McCollum
patent: 4366613 (1983-01-01), Ogura et al.
patent: 4413401 (1983-11-01), Klein et al.
patent: 4536947 (1985-08-01), Bohr et al.
patent: 4702797 (1987-10-01), Shimano et al.
patent: 4751557 (1988-06-01), Sunami et al.
patent: 4763181 (1988-08-01), Tasch, Jr.

Affiliated with

Also associated with

Rating

Process for manufacturing a dynamic random access memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing a dynamic random access memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing a dynamic random access memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1398673