Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-28
2011-10-18
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257SE29013, C257SE29012, C438S134000, C438S337000, C438S270000
Reexamination Certificate
active
08039898
ABSTRACT:
An embodiment of a process for manufacturing a semiconductor power device envisages the steps of: providing a body made of semiconductor material having a first top surface; forming an active region with a first type of conductivity in the proximity of the first top surface and inside an active portion of the body; and forming an edge-termination structure. The edge-termination structure is formed by: a ring region having the first type of conductivity and a first doping level, set within a peripheral edge portion of the body and electrically coupled to the active region; and a guard region, having the first type of conductivity and a second doping level, higher than the first doping level, set in the proximity of the first top surface and connecting the active region to the ring region. The process further envisages the steps of: forming a surface layer having the first type of conductivity on the first top surface, also at the peripheral edge portion, in contact with the guard region; and etching the surface layer in order to remove it above the edge portion in such a manner that the etch terminates inside the guard region.
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European Search Report for EP 06 42 5448 dated Jan. 19, 2007.
Frisina Ferruccio
Murabito Domenico
Saggio Mario Giuseppe
Graybeal Jackson LLP
Jablonski Kevin D.
Jorgenson Lisa K.
Laurenzi Mark A
Pham Thanh V
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