Process for manufacturing a byte selection transistor for a...

Details Process for manufacturing a byte selection transistor for a... Process for manufacturing a byte selection transistor for a...

2005-12-06

2005-12-06

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S319000, C257S326000

Reexamination Certificate

active

06972454

ABSTRACT:
In a matrix of non volatile memory cells integrated on a semiconductor substrate, each memory cell includes a floating gate transistor and a selection transistor formed in a first active area, while each byte includes a byte selection transistor formed in a second active area separated from the first by portions of insulating layer. A portion of a multilayer structure including a gate oxide layer, a first polysilicon layer, a dielectric layer, and a second polysilicon layer extends over the byte selection and selection transistors, forming the gate regions thereof, and further extending on a portion of insulating layer. A conductive layer is formed in an opening in the second polysilicon and dielectric layers, over the portion of insulating layer, putting the first polysilicon layer in electric contact with the second polysilicon layer. Another portion of the multiplayer structure comprises the gate region of the floating gate transistor.

REFERENCES:
patent: 4960732 (1990-10-01), Dixit et al.
patent: 6268247 (2001-07-01), Cremonesi et al.
patent: 2002/0060349 (2002-05-01), Libera et al.

Affiliated with

Also associated with

Rating

Process for manufacturing a byte selection transistor for a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacturing a byte selection transistor for a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacturing a byte selection transistor for a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3489760