Process for manufacture of radiation resistant power MOSFET and

Details Process for manufacture of radiation resistant power MOSFET and Process for manufacture of radiation resistant power MOSFET and

1994-08-10

1995-12-12

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257471, 257476, 257607, H01L 2978, H01L 2348

Patent

active

054752523

ABSTRACT:
A process for producing a radiation resistant power MOSFET is disclosed. The gate oxide is formed toward the end of the processing and is not exposed to substantial thermal cycling. Arsenic doping is used in the early part of the process to form the source region, and diffused too slowly to be adversely affected by later thermal cycling process steps. The source region has a relatively high resistance to act as a ballasting resistor to prevent burnout of one of a large number of parallel connected cells.

REFERENCES:
patent: 4364073 (1982-12-01), Becke et al.
patent: 4495513 (1985-01-01), Descamps
patent: 4502069 (1985-02-01), Schuh
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4599118 (1986-07-01), Han et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4721990 (1988-01-01), Kinoshita

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