Process for manufacture of micro electromechanical devices havin

Details Process for manufacture of micro electromechanical devices havin Process for manufacture of micro electromechanical devices havin

1998-05-08

2000-12-12

Mills, Gregory

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 33, 216 36, 216 80, 438 52, B44C 122, C03C 1500, C03C 2568, H01L 2100

Patent

active

061593850

ABSTRACT:
The present invention relates to a fabrication process relating to a fabrication process for manufacture of micro-electromechanical (MEM) devices such as cantilever supported beams. This fabrication process requires only two lithographic masking steps and offers moveable electromechanical devices with high electrical isolation. A preferred embodiment of the process uses electrically insulating glass substrate as the carrier substrate and single crystal silicon as the MEM component material. The process further includes deposition of an optional layer of insulating material such as silicon dioxide on top of a layer of doped silicon grown on a silicon substrate. The silicon dioxide is epoxy bonded to the glass substrate to create a silicon--silicon dioxide-epoxy-glass structure. The silicon is patterned using anisotropic plasma dry etching techniques. A second patterning then follows to pattern the silicon dioxide layer and an oxygen plasma etch is performed to undercut the epoxy film and to release the silicon MEM component. This two-mask process provides single crystal silicon MEMs with electrically isolated MEM component. Retaining silicon dioxide insulating material in selected areas mechanically supports the MEM component.

REFERENCES:
patent: 5578976 (1996-11-01), Yao
patent: 5585311 (1996-12-01), Ko
patent: 5646432 (1997-07-01), Iwaki et al.
patent: 5658698 (1997-08-01), Yagi et al.

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