Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-07-08
2000-11-07
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, H01L 214763
Patent
active
061436437
ABSTRACT:
The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polysilica.
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Carter Kenneth Raymond
Hawker Craig Jon
Hedrick James Lupton
Lee Victor Yee-Way
Miller Robert Dennis
International Business Machines - Corporation
Morris Daniel P.
Nelms David
Nhu David
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