Process for manufacture of integrated circuit device using...

Details Process for manufacture of integrated circuit device using... Process for manufacture of integrated circuit device using...

1998-07-08

2001-12-25

Baxter, Janet (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S320000, C430S330000, C430S322000, C430S317000, C430S272100

Reexamination Certificate

active

06333141

ABSTRACT:

FIELD OF THE INVENTION
The invention relates generally to a process for manufacturing an integrated circuit device. More specifically, the invention relates to the use of three dimensional polymers to create an insulative porous matrix material.
BACKGROUND OF THE INVENTION
There is a continuing desire in the microelectronics industry to increase the circuit density in multilevel integrated circuit devices e.g., memory and logic chips, thereby increasing their performance and reducing their cost. In order to accomplish this goal, there is a desire to reduce the minimum feature size on the chip e.g., circuit linewidth, and also to decrease the dielectric constant of the interposed dielectric material to enable closer spacing of circuit lines without increase in crosstalk and capacitive coupling. Further, there is a desire to reduce the dielectric constant of the dielectric materials such as utilized in the back end of the line (BEOL) portion of integrated circuit devices, which contain input/output circuitry, to reduce the requisite drive current and power consumption for the device. The present dielectric is silicon dioxide which has a dielectric constant of about 4.0. This material has the requisite mechanical and thermal properties to withstand processing operations and thermal cycling associated with semiconductor manufacturing. However, it is desired that dielectric materials for future integrated circuit devices exhibit a lower dielectric constant (e.g., <3.0) than exhibited by current silicon dioxide.
It is therefore an object of the present invention to provide an improved integrated circuit device comprising an improved dielectric material.
Other objects and advantages of the invention will be apparent from the following disclosure.
SUMMARY OF THE INVENTION
The present invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) interconnecting metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned contiguous to the circuit lines (over and/or between the circuit lines). The dielectric material comprises a porous organic polysilica formed by the process of the present invention. Preferably, the dielectric material has pore sizes less than 500 Å.
A more thorough disclosure of the present invention is presented in the detailed description which follows and from the accompanying drawings.


REFERENCES:
patent: 3547839, 19701200
patent: 3732181, 9730500
patent: 3900320, 19750800
patent: 3917761, 19751100
patent: 4141877, 19790200
patent: 4457972A, 19840700
patent: 4535099, 19850800
patent: 4623463, 19861100
patent: 4725662, 19880200
patent: 4761233, 19880800
patent: 4920402, 19900400
patent: 5036145, 19910700
patent: 5043369, 19910800
patent: 5114826, 19920500
patent: 5130025, 19920700
patent: 5136014, 19920800
patent: 5183607, 19930200
patent: 5188777, 19930200
patent: 5198203, 19930300
patent: 5206337, 19930400
patent: 5252654, 19931000
patent: 5288842, 19940200
patent: 5304515, 19940400
patent: 5384376, 19950100
patent: 5412016, 19950500
patent: 5412160, 19950500
patent: 5420232, 19950500
patent: 5461003, 19951000
patent: 5470801, 19951100
patent: 5498689, 19960300
patent: 5521424 (1996-05-01), Ueno et al.
patent: 5523615, 19960600
patent: 5633034, 19970500
patent: 5658994, 19970800
patent: 5747381, 19980500
patent: 5767014, 19980600
patent: 5773197, 19980600
patent: 5883219, 19990300
patent: 5895263, 19990400
patent: 6093636, 20000700
patent: 0 755 957 (1997-01-01), None
patent: 0 524 930 (1997-03-01), None
patent: 2 006 643 (1979-05-01), None
patent: 63-172741 (1988-07-01), None
patent: 63-278943 (1988-11-01), None
patent: 05205526 (1993-08-01), None
patent: WO 97/01593 (1997-01-01), None
patent: WO 97/10193 (1997-03-01), None
Allen, G. et al.,Comprehensive Polymer Science. The Synthesis, Characterization, Reactions&Applications of Polymers, vol. 1, pp. 17-18 and 34-37, Pergamon Press (Date Unknown).
Allen, G. et al.,Comprehensive Polymer Science. The Synthesis, Characterization, Reactions&Applications of Polymers, vol. 3, pp. 34-37, Pergamon Press (Date Unknown).
Encyclopedia of Polymer Science and Engineering. Anionic Polymerization to Cationic Polymerization, “Block Copolymers”, 2:324-327, a Wiley-Interscience Publication (Date Unknown).
Fang, T. et al., “Polycyanate Esters: Science and Applications”,Prog. Polym. Sci., 20:61-118 (1995).
Frechet, J. et al., “Synthesis and Properties of Dendrimers and Hyperbranched Polymers”,Comprehensive Polymer Science, Second Supplement, pp. 71-132, Pergamon (Date Unknown).
Gauthier, M. et al., “Uniform Highly Branched Polymers by Anionic Grafting: Arborescent Graft Polymers”,Macromolecules, 24:4548-4553 (1991).
Tian, D. et al., “Ring-Opening Polymerization of 1,4,8-Trioxaspiro[4,6]-9-undecanone: A New Route to Aliphatic Polyesters Bearing Functional Pendent Groups”,Macromolecules, 30:406-409 (1997).
Tomalia, D. et al., “Comb-Burst Dendrimer Topology. New Macromolecular Architecture Derived from Dendritic Grafting”,Macromolecules, 24: 1435-1438 (1991).
Tomalia, D. et al., “Genealogically Directed Synthesis: Starburst/Cascade Dendrimers and Hyperbranched Structures”,Topics in Current Chemistry, 165:193-313 (1993).
Babich, E. et al., “Low Viscosity and High Temperature Stable Gap Filling Material for Glass/Ceramic Substrates”,IBM Technical Disclosure Bulletin, 37(7):595-597 (Jul. 1994).
Chujo, Y., “Organic/Inorganic Polymer Hybrids”,Polymeric Materials Encyclopedia, 6:4793-4798 (1996).
Chujo, Y. et al., “Organic Polymer Hybrids with Silica Gel Formed by Means of the Sol-Gel Method”,Advances in Polymer Science, 100:11-29 (Feb. 25, 1991).
Hedrick, J., “Poly(aryl ether benzothiazoles)”,Macromolecules, 24:6361-6364 (1991).
Hilborn, J. et al., “Poly(aryl ether-benzoxazoles)”,Macromolecules, 23(11):2854-2861 (1990).
Homma, T. et al., “Stability of a new Polyimide Siloxane Film as Interlayer Dielectrics of ULSI Multilevel Interconnections”,Thin Solid Films, 235:80-85 (1993).
Joseph, W. et al., “Synthesis of Bis-A Based Polybenzoxazoles via Acid-Catalyzed Solution Cyclization”,Polymer Reprints, 33(1):501-502 (Apr. 1992).
Joseph, W. et al., “Synthesis of 4,4′-Isospropylidene Diphenol (Bisphenol A) Based Polybenzoxazoles via an Acid-Catalysed Solution Cyclization Process”,Polymer, 34(4) (1993).
Joseph, W. et al., “Synthesis and Characterization of Fluorinated Polybenzoxales via Solution Cyclization Techniques”,Polymer Preprints, 34(1):397-398 (Mar. 1993).
Joseph, W. et al., “Synthesis and Characterization of Fluorinated Polybenzoxazoles via Solution Cyclization Techniques”,Polymer, 35(23):5046-5050 (1994).
Mascia, L., “Developments in Organic-Inorganic Polymeric Hybrids: Ceramers”,Trends in Polymer Science, 3(2):61-66 (Feb. 1996).
McDermott, C., “Foamed Thermoset and Thermoplastic Polymer Combinations”,IBM Technical Disclosure Bulletin, 8(12):1702 (May 1966).
Morikawa, A. et al., “Preparation of a New Class of Polyimide-Silica Hybrid Films by Sol-Gel Process”,Polymer Journal, 24(1):107-113 (1992).
Morikawa, A. et al., “Preparation of New Polyimide-Silica Hybrid Materials via the Sol-Gel Process”,J. Mater. Chem., 2(7):679-689 (1992).
Munroe, R., “Method for Curing and Holding Semiconductors for Organic Encapsulation”,IBM Technical Disclosure Bulletin, 27(7A):4037-4038 (Dec. 1984).
Saegusa, T. et al., “An organic/Inorganic Hybrid Polymer”,J. Macromol. Sci. Chem., A27:(13 & 14):1603-1612 (1990).
Volksen, W., “Condensation Polyimides: Synthesis, Solution Behavior, and Imidization Characteristics”,Advances in Polymer Science, 117:138-139, 163 (1994).
Volksen, W. et al., “Polyamic Alkyl Esters: Versatile Polyimide Precursors for Improved Dielectric Coatings”,IEEE Transactions on Components, Hybrids and Manufacturing Technology(IEEE Log. No. 9104490) (1992).

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